On free-exciton behavior in molecular-beam epitaxially grown Si[1?x]Ge[x] quantum wells

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DOIResolve DOI: http://doi.org/10.1116/1.586820
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TypeArticle
Journal titleJournal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
ISSN10711023
Volume11
IssueMay 3
Pages11011105; # of pages: 5
Publication date
LanguageEnglish
AffiliationNRC Institute for National Measurement Standards; National Research Council Canada
Peer reviewedNo
Identifier10495228
NRC number1156
NPARC number8899837
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Record identifier1116b49f-edff-4bd8-90d1-3a5e601720b8
Record created2009-04-22
Record modified2016-05-09
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