Bend loss attenuator by carrier injection in InGaAsP/InP

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DOIResolve DOI: http://doi.org/10.1049/el:20053357
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TypeArticle
Journal titleElectronics Letters
Volume41
Issue24
Pages13481350; # of pages: 3
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12744202
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Record identifier11832292-19d1-46b9-adc2-76985ccaa75b
Record created2009-10-27
Record modified2016-05-09
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