On the breakdown of layer-by-layer growth and the spontaneous nucleation of misfit dislocations in molecular-beam epitaxially grown GeSi/Si

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DOIResolve DOI: http://doi.org/10.1116/1.586730
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TypeArticle
Journal titleJournal of vacuum science and technology. B
ISSN1071-1023
Volume11
IssueMay 3
Pages889891; # of pages: 3
Publication date
LanguageEnglish
AffiliationNRC Institute for National Measurement Standards
Peer reviewedNo
Identifier10495228
NRC number1159
NPARC number8899140
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Record identifier1196e1cb-c1cb-473b-b8cd-471648d1601d
Record created2009-04-22
Record modified2016-05-09
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