Microwave-enhanced dephasing time in a HgCdTe film

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DOIResolve DOI: http://doi.org/10.1063/1.4773178
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TypeArticle
Journal titleApplied Physics Letters
ISSN0003-6951
Volume102
Issue1
Article number12108
SubjectAnti-localization effects; Dephasing; Heating mechanisms; HgCdTe; HgCdTe films; Microwave field; Microwave power; Electron gas; Mercury compounds
AbstractThe antilocalization effect in a compensated HgCdTe film is observed. With an applied microwave field, both the zero-magnetic-field conductance and the dephasing time are enhanced nonlinearly with microwave power. The observation concerning the dephasing time is inconsistent with a heating mechanism. Such behavior is also in contrast to the microwave-induced suppression of weak-antilocalization and dephasing time seen for a two-dimensional electron gas of the anodic-oxidized HgCdTe. The nonlinear increase in zero-magnetic-field conductance is consistent with a microwave-assisted-hopping mechanism. The increased dephasing time can be explained qualitatively by the microwave-assisted-hopping mechanism and a microwave-induced increase in the electron density. © 2013 American Institute of Physics.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Microstructural Sciences (IMS-ISM)
Peer reviewedYes
NPARC number21269990
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Record identifier123cb098-6d23-4590-bdc2-ee4caf861bdc
Record created2013-12-13
Record modified2016-05-09
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