Strain relaxation at low misfits: dislocation injection vs. surface roughening

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Proceedings title1995 MRS Fall Meeting - Symposium D – Evolution of Epitaxial Structure and Morphology
Series titleMaterials Research Society Symposia Proceedings; no. 399
Conference1995 MRS Fall Meeting: Symposium D: Evolution of epitaxial structure and morphology, November 27-December 1, 1995, Boston, Massachusetts, U.S.A.
AbstractTwo competing strain relaxation mechanisms, namely misfit dislocation generation and surface roughening, have been extensively studied using the GexSi1-x/Si (x< 0.5) system as an example. A predictive model has been developed which accurately describes the nature of misfit dislocation nucleation and growth under non-equilibrium conditions. Using optical and electron microscopy, coupled with a refined theoretical description of dislocation nucleation, it is shown that strain relieving dislocations are readily generated at low misfits with a characteristic activation energy barrier regardless of the growth technique employed (i.e. MBE, RTCVD and UHVCVD). Secondly we have studied the alternative elastic strain relaxation mechanism involving surface undulation; x-ray diffraction, electron and atomic force microscopy have been used to characterize GexSi1-x/Si (x<0.5) structures grown by UHVCVD and MBE at relatively higher temperatures. A theoretical model has been used to model the critical thickness for surface wave generation. The conditions governing the interplay between dislocation formation and surface buckling are described in terms of a "morphological instability diagram".
Publication date
PublisherCambridge University Press
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number12338541
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Record identifier129e27b3-fa6c-4072-8efb-0b0d612c2424
Record created2009-09-10
Record modified2016-05-09
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