Sampling depth of total electron and fluorescence measurements in Si L- and K-edge absorption spectroscopy

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DOIResolve DOI: http://doi.org/10.1016/0169-4332(96)00454-0
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TypeArticle
Journal titleApplied Surface Science
Volume99
Issue4
Pages303312; # of pages: 10
AbstractHigh resolution Si L-edge and K-edge X-ray absorption near edge structure (XANES) spectra for SiO2 on Si substrates have been recorded using total electron yield (TEY) and fluorescence yield (FY) techniques. The sampling depths of TEY and FY for Si L-edge and Si K-edge, respectively, have been investigated in the energy range 95-120 eV and 1830-1900 eV. The maximum sampling depth for TEY is found to be ~ 5 nm for the Si L-edge and ~ 70 nm for the K-edge regions. The FY sampling depth at the L-edge is ~ 70 nm whereas for the K-edge, the sampling depth is several hundred nm. Based on these data, and using a theoretical model, electron escape depths for the TEY measurements in both energy ranges have been deduced.
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AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12329097
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Record identifier13421ca6-176d-4b14-9959-1282bc42cd9c
Record created2009-09-10
Record modified2016-05-09
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