Evidence of phonon drag in the thermopower of a GaAs-Ga0.68Al0.32As heterojunction

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DOIResolve DOI: http://doi.org/10.1103/PhysRevB.37.3137
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TypeArticle
Journal titlePhysical Review B
ISSN0163-1829
Volume37
Issue6
Pages31373140; # of pages: 4
AbstractWe report the first experimental demonstration that phonon drag is present in the thermopower of a two-dimensional electron gas at a GaAs-Ga0.68Al0.32As heterojunction in both zero and high magnetic fields. The experiment involves polishing the rear surface of the GaAs plate on which the junction is grown in order to increase the phonon mean free path. This results in an increase of the thermopower by about a factor of 2 even though the electrical resistivities are unaffected. © 1988 The American Physical Society.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada
Peer reviewedYes
NPARC number21274621
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Record identifier143ab50d-7afa-4b62-9196-21e7eb4de6aa
Record created2015-03-18
Record modified2016-05-09
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