Infrared emission from MBE grown SiGe strained layers

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TypeArticle
ConferenceElectronic, optical and device properties of layered structures : proceedings of symposium B, 1990 Fall Meeting of the Materials Research Society, November 26-December 1, 1990, Boston, Massachusetts, USA
Pages710; # of pages: 4
LanguageEnglish
AffiliationNRC Institute for National Measurement Standards
Peer reviewedNo
NRC number1108
NPARC number8898941
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Record identifier149e4df8-ab35-4c2a-b31c-8376d42f8551
Record created2009-04-22
Record modified2016-05-09
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