Effect of emitter design on the dc characteristics of InP-based double-heterojunction bipolar transistors

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DOIResolve DOI: http://doi.org/10.1088/0268-1242/16/3/309
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TypeArticle
Journal titleSemiconductor Science and Technology
Volume16
Issue3
Pages171175; # of pages: 5
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12744754
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Record identifier14a748bf-39ea-4603-9392-07c71cd5184c
Record created2009-10-27
Record modified2016-05-09
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