The origin of switching noise in GaAs/AlGaAs lateral gated devices

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DOIResolve DOI: http://doi.org/10.1016/j.physe.2006.03.118
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TypeArticle
Journal titlePhysica E: Low-dimensional Systems and Nanostructures
Volume34
Issue1-2
Pages553556; # of pages: 4
AbstractWe have studied at low temperatures the switching (telegraph) noise in quantum point contacts fabricated on GaAs/AlGaAs heterostructures and introduce a model for its origin which explains why the noise can be suppressed by cooling the samples with a positive bias applied to the gates. This model depends on there being a small tunnel current of electrons from gate to channel and we have detected such a current at the level of View the MathML source10-20A using a quantum corral fabricated on similar material.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12744657
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Record identifier14ed46b9-c16b-4129-82e1-f7810baa7545
Record created2009-10-27
Record modified2016-05-09
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