Room temperature photovoltaic response of split-off band infrared detectors with a graded barrier

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DOIResolve DOI: http://doi.org/10.1117/12.870047
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TypeArticle
Proceedings titleProceedings of SPIE - The International Society for Optical Engineering
ConferenceQuantum Sensing and Nanophotonic Devices VIII, 23 January 2011 through 27 January 2011, San Francisco, CA
ISSN0277-786X
ISBN9780819484826
Volume7945
Article number79451I
SubjectAsymmetric bands; Barrier heights; Built-in potential; Excited carriers; Graded Barrier; High Temperature; Infrared; Photovoltaic; Photovoltaic operation; Photovoltaic response; Responsivity; Room temperature; Specific detectivity; Split-off band; Trapping effects; Detectors; Nanophotonics; Photovoltaic effects
AbstractSplit-off band detectors have been demonstrated operating at or above room temperatures. However the specific detectivity was somewhat low due to the high dark current. Increasing the barrier height can suppress the dark current at high temperatures but results in a low responsivity due to the capture of carriers in emitters. A difference between the heights of the barriers on the two sides of an emitter provides highly energized carriers injected into the emitter and hence reduces the trapping effects. Three p-GaAs/AlGaAs samples with different Al fractions in the graded barriers are used to test these effects. Due to the graded barrier, the samples have an asymmetric band structure which makes it easier for excited carriers to travel in one direction than in the other. Therefore, photovoltaic operation is possible due to the built-in potential under equilibrium. Preliminary results obtained from these samples will be discussed. © 2011 SPIE.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Microstructural Sciences (IMS-ISM)
Peer reviewedYes
NPARC number21271201
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Record identifier159dbf1b-0798-4cac-a473-76c9f2e1b5f7
Record created2014-03-24
Record modified2016-05-09
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