Fabrication of metal nanowires by ion-beam irradiation of oxides through high aspect ratio resist masks

Download
  1. Get@NRC: Fabrication of metal nanowires by ion-beam irradiation of oxides through high aspect ratio resist masks (Opens in a new window)
DOIResolve DOI: http://doi.org/10.1116/1.3548875
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
TypeArticle
Journal titleJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
ISSN1071-1023
Volume29
Issue2
Article number21013
SubjectBismuth nanowires; Bismuth oxides; Contact pads; Dielectric matrixes; e-Beam lithography; Electrical property; Electron beam resist; High aspect ratio; Ion beam irradiation; matrix; Metal film; Metal nanowire; Metal oxides; Metal wires; Oxygen atom; Parallel nanowires; Selective removal; Single layer; Zeon Chemicals; Aspect ratio; Bismuth; Electric properties; Electric wire; Electron beam lithography; Fabrication; Ion beams; Irradiation; Metallic compounds; Nanowires; Oxygen; Protons; Metals
AbstractA method of ion-beam-induced reduction in oxides is used to produce metal-bismuth nanowires embedded into a matrix of a highly insulating dielectric-bismuth oxide. The metal film is formed in the process of reduction of the metal oxide by selective removal of oxygen atoms under irradiation by the beam of protons through a mask. The mask containing pairs of parallel nanowires with contact pads was fabricated using 50 kV electron-beam lithography in a single layer of 200-nm-thick ZEP-520 (Zeon Chemicals L.P., ZEP-520 electron-beam resist) electron-beam resist. Electrical properties of the fabricated nanowires have been studied. Broadening of the fabricated metal wires with respect to the initial mask width was found to be dependent on the energy of irradiating protons. This effect may be attributed to the scattering of protons in the oxide-film. It is shown that the method of selective atom removal combined with high aspect ratio e-beam lithography is a feasible technique for fabrication of metal nanowires embedded in a dielectric matrix of metal oxide. © 2011 American Vacuum Society.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Institute for Microstructural Sciences (IMS-ISM)
Peer reviewedYes
NPARC number21271139
Export citationExport as RIS
Report a correctionReport a correction
Record identifier15d34570-d6ff-4ef7-a634-442c1998b80a
Record created2014-03-24
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)