Dopant depletion in the near surface region of thermally prepared silicon (100) in UHV

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Journal titleJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Article number21806
SubjectCharging characteristics; Dopant atoms; Dopant concentrations; Dopant state; Doped sample; Hydrogen-terminated silicon; Hydrogen-terminated surfaces; Imaging characteristics; Near surface regions; Near-surface; Silicon (100); Ultrahigh vacuum scanning tunneling microscopies; Arsenic; Carrier concentration; Dangling bonds; Electric charge; Hydrogen; Scanning tunneling microscopy; Semiconductor doping
AbstractDegenerately doped (arsenic) n-type hydrogen terminated silicon (100) samples were prepared using various heat treatments for ultrahigh vacuum scanning tunneling microscopy (STM) and spectroscopy (STS) analysis. Samples heat treated to 1050 C were found to have a consistent level of doping throughout the bulk and near surface regions. STS revealed tunneling through dopant states consistent with degenerately doped samples. SIMS profiling and HREELS measurements confirmed dopant and carrier concentrations, respectively. Samples heated to 1250 C were found to have a reduced concentration of dopants in the near surface region. STS measurements showed shifted I/V curves and the loss of tunneling through dopant states in the band gap, indicating reduced dopant concentrations. Observations were confirmed by SIMS and HREELS where depleted dopants and reduced carrier concentrations were measured. The effect of the varying surface dopant concentrations on the STM imaging characteristics of dangling bonds on hydrogen terminated surfaces was also investigated. Understanding the effect of thermal processing on near surface dopant atom concentrations will permit better control over equilibrium charge occupation and charging characteristics of dangling bond midgap states on H:silicon. © 2012 American Vacuum Society.
Publication date
AffiliationNational Research Council Canada (NRC-CNRC); National Institute for Nanotechnology (NINT-INNT)
Peer reviewedYes
NPARC number21269460
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Record identifier16a1a2cb-22ae-494c-ae5b-c21128912fa5
Record created2013-12-12
Record modified2016-05-09
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