Surface-directed spinodal decomposition in the pseudobinary alloy (HfO2)x(SiO2)1−x

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DOIResolve DOI: http://doi.org/10.1063/1.3448232
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TypeArticle
Journal titleJournal of applied physics
Volume107
Issue12
Pages123510-1123510-9
AbstractHf silicate films (HfO2)0.25(SiO2)0.75 with thicknesses in the range 4–20 nm were grown on silicon substrate by atomic layer deposition at 350 °C. Hf distributions in as-grown and 800 °C annealed films were investigated by high resolution transmission electron microscopy (HRTEM), angle-resolved x-ray photoelectron spectroscopy (ARXPS), and medium energy ion scattering (MEIS). HRTEM images show a layered structure in films thinner than 8 nm. The ARXPS data also reveal a nonuniform distribution of Hf throughout the film depth. Diffusion of SiO2 to the film surface after a longer time anneal was observed by MEIS. All these observations provide evidence for surface-directed spinodal decomposition in the pseudobinary (HfO2)x(SiO2)1−x alloy system.
Publication date
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number17326679
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Record identifier16c3ff85-c7fa-4ceb-b36a-a96063bb849f
Record created2011-03-26
Record modified2016-05-09
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