Dry etching of copper phthalocyanine thin films: Effects on morphology and surface stoichiometry

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DOIResolve DOI: http://doi.org/10.3390/molecules170910119
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TypeArticle
Journal titleMolecules
ISSN1420-3049
Volume17
Issue9
Pages1011910130; # of pages: 12
Subjectcarbon; copper; indole derivative; nitrogen; organometallic compound; oxygen; phthalocyanine copper; article; chemistry; gas laser; surface property; X ray photoelectron spectroscopy; Carbon; Copper; Indoles; Lasers, Gas; Nitrogen; Organometallic Compounds; Oxygen; Photoelectron Spectroscopy; Surface Properties
AbstractWe investigate the evolution of copper phthalocyanine thin films as they are etched with argon plasma. Significant morphological changes occur as a result of the ion bombardment; a planar surface quickly becomes an array of nanopillars which are less than 20 nm in diameter. The changes in morphology are independent of plasma power, which controls the etch rate only. Analysis by X-ray photoelectron spectroscopy shows that surface concentrations of copper and oxygen increase with etch time, while carbon and nitrogen are depleted. Despite these changes in surface stoichiometry, we observe no effect on the work function. The absorbance and X-ray diffraction spectra show no changes other than the peaks diminishing with etch time. These findings have important implications for organic photovoltaic devices which seek nanopillar thin films of metal phthalocyanine materials as an optimal structure.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); Security and Disruptive Technologies
Peer reviewedYes
NPARC number21270236
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Record identifier17073649-7a2b-4263-a47f-5fd633a21084
Record created2014-01-15
Record modified2016-05-09
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