Hysteresis in the switching of hot electrons in InP/InGaAs double-heterojunction bipolar transistors

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DOIResolve DOI: http://doi.org/10.1063/1.358456
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TypeArticle
Journal titleJournal Of Applied Physics
Volume76
Issue4
Pages25592561; # of pages: 3
SubjectBIPOLAR TRANSISTORS; GALLIUM ARSENIDES; HETEROJUNCTIONS; HOT ELECTRONS; HYSTERESIS; INDIUM ARSENIDES; INDIUM PHOSPHIDES; SWITCHING; TEMPERATURE RANGE 65273 K
AbstractThe switching behavior of a composite-collector InP/InGaAs heterojunction bipolar transistor is found to be hysteretic at temperatures below 200 K. This arises from the underlying S-shaped negative differential conductivity associated with the hot-electron transport of electrons across the heterojunction barrier in the collector structure of such transistors.
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AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12327130
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Record identifier174127f5-2ab9-4d06-93dd-c81f179f2b06
Record created2009-09-10
Record modified2016-05-09
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