Optical properties of germanium dots self-assembled on porous TiO 2 templates

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DOIResolve DOI: http://doi.org/10.1149/1.3553166
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TypeArticle
Proceedings titleECS Transactions
ConferenceInternational Symposium on Pits and Pores IV: New Materials and Applications - 218th ECS Meeting, 10 October 2010 through 15 October 2010, Las Vegas, NV
ISSN1938-5862
ISBN9781607682226
Volume33
Issue16
Pages147165; # of pages: 19
SubjectDot diameter; Dot size; Energy dependence; Ge dots; In-situ; Near-infrared bands; Peak energy; PL bands; PL efficiency; PL spectra; Porous TiO; Self-assembled; Self-assembled Ge quantum dots; Si(0 0 1); Thermal-annealing; Tight binding; Transmission electron; Atomic force microscopy; Germanium; Molecular beam epitaxy; Optical properties; Silicon compounds; Size distribution; Titanium dioxide; Amorphous materials
AbstractSelf-assembled Ge quantum dots were formed by in-situ thermal annealing of a thin amorphous Ge layer deposited by molecular beam epitaxy on a thin porous TiO 2 layer grown on SiO 2 on Si(001). For samples with dot diameters ranging from 10 to 35 nm, the dot photoluminescence (PL) appeared primarily as a wide near-infrared band peaked near 800 meV. The peak energy of the PL band reflects the average dot size and its shape depends on the dot size distribution. Using a tight binding bandgap model, we have analyzed the PL spectrum in terms of the dot size distribution. The observed size distribution determined from transmission electron and atomic force microscopy allowed the determination of the nonlinear increase in the PL efficiency with decreasing dot diameter. Knowing this generic PL efficiency, we show that it is possible to evaluate the size distribution of Ge dots from their PL energy dependence. ©The Electrochemical Society.
Publication date
LanguageEnglish
AffiliationMeasurement Science and Standards; National Research Council Canada
Peer reviewedYes
NPARC number21271610
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Record identifier1b4a8ac0-6879-4f15-92fd-d97fed13a7bf
Record created2014-03-24
Record modified2016-05-09
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