SiC-based materials and devices - a review

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TypeTechnical Report
Series titleIMTI ITFI Publication; no. 8
Physical description19 p.
SubjectSiC technology; semiconductors
AbstractWide bandgap semiconductors, such as silicon carbide, have a great potential for high-temperature, high-power, high-frequency electronics, and for short-wavelength optoelectronics. The rapid progress in the last few years on SiC material and SiC based device development is providing unique opportunities for the development of new SiC-based electronics.
Publication date
PublisherNational Research Council Canada
AffiliationNational Research Council Canada
Peer reviewedNo
NPARC number21272475
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Record identifier1cad5c3e-81b2-4587-afe1-e5897918fcf9
Record created2014-11-28
Record modified2016-10-03
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