SiC-based materials and devices - a review

  1. (PDF, 1 MB)
DOIResolve DOI:
AuthorSearch for: ; Search for:
TypeTechnical Report
Series titleIMTI ITFI Publication; no. 8
Physical description19 p.
SubjectSiC technology; semiconductors
AbstractWide bandgap semiconductors, such as silicon carbide, have a great potential for high-temperature, high-power, high-frequency electronics, and for short-wavelength optoelectronics. The rapid progress in the last few years on SiC material and SiC based device development is providing unique opportunities for the development of new SiC-based electronics.
Publication date
PublisherNational Research Council Canada
AffiliationNational Research Council Canada
Peer reviewedNo
NPARC number21272475
Export citationExport as RIS
Report a correctionReport a correction
Record identifier1cad5c3e-81b2-4587-afe1-e5897918fcf9
Record created2014-11-28
Record modified2016-10-03
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)