Observation of an optical switching effect in GaAs/AlGaAs quantum wells under hydrostatic pressure

DOIResolve DOI: http://doi.org/10.1016/0022-3697(94)00213-4
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Proceedings titleJournal of Physics and Chemistry of Solids
Conference6th International Conference on High Pressure Semiconductor Physics
Pages375379; # of pages: 5
Subjectquantum wells; high pressure; optical properties
AbstractWe have observed extremely sharp (Δ ˜ 0.01 meV) discontinuities in the photoluminescence excitation (PLE) spectra of GaAs/AlₓGa₁₋ₓAs single quantum wells under hydrostatic pressure at low temperatures. These discontinuities are found to originate from abrupt changes in the photoluminescence (PL) spectrum as a function of the excitation energy. Near each discontinuity, the PL spectrum shows a doublet for excitation energies on one side of the discontinuity, and only a single peak for excitation energies on the other side. The lower energy peak of the doublet is completely quenched on the other side of the discontinuity, which means that by changing the excitation photon energy slightly, the PL mechanism responsible for the lower energy peak can be switched on and off. The dependence of this phenomenon on pressure, temperature, and the excitation laser intensity has been investigated for a 70 Å quantum well. The energies of these discontinuities in the PLE spectrum have similar pressure coefficients to the GaAs band gap energy, and are observed only in the pressure range of ˜17–25 kbar, at low temperature (≲27 K), and at a moderately high (>4 W/cm2) excitation laser intensity.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12328847
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Record identifier1f5eeff2-f1f7-45c6-9ec0-8d83e01f99ea
Record created2009-09-10
Record modified2016-05-09
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