Photoluminescence in amorphous Si/SiO[sub 2] superlattices fabricated by magnetron sputtering

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DOIResolve DOI: http://doi.org/10.1063/1.116811
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TypeArticle
Journal titleApplied Physics Letters
Volume69
Issue21
Pages31493151; # of pages: 3
SubjectAMORPHOUS STATE; ANNEALING; SI JUNCTIONS; SILICON; SILICON OXIDES; SPUTTERED MATERIALS; SUPERLATTICES
AbstractAmorphous Si/SiO2 superlattices with 100�525 periods and a 2�3 nm periodicity were deposited by radio frequency magnetron sputtering onto silicon and quartz substrates. All samples exhibited visible photoluminescence (PL) at room temperature and the PL peak wavelength shifted towards shorter wavelengths with decreasing Si layer thickness. For 425 and 525 period superlattices there was a strong modulation of the PL intensity and optical transmittance versus wavelength resulting from optical interference within the superlattice. The PL intensity increased dramatically after annealing the superlattices in air at 1100 �C.
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AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12330156
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Record identifier1f636a00-5c29-49e5-9be9-cf6caf3af504
Record created2009-09-10
Record modified2016-05-09
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