Binary atomic silicon logic

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TypeArticle
Journal titleCondensed Matter
Article numberarXiv:1706.07427v3
Pages# of pages: 8
Physical descriptionversion 3
AbstractThe ultimate in miniature circuitry, exactingly crafted of single atom building blocks, can unleash a new basis for electronic devices, one that is far more energy efficient, while at once much faster and more compact than today's state of the art. While examples of atom-crafting with a suitable level of precision and complexity has existed for 3 decades, that control did not extend to electronically useful and also strongly bonded material systems. The attractive idea of forming circuitry of very robust patterned hydrogen atom terminated silicon surface states had been expressed decades ago, but, sufficient understanding of single atom states, ensemble states, and the interaction of those with dopants and bulk states was lacking and has only very recently been established. That new understanding coupled with greatly improved atomic scale fabrication methods developed just months ago have enabled a great step forward. Here, we report the first example of reversible information transmission through a binary wire (a two state wire) made of atomic silicon quantum dots. A binary OR gate and its full truth table has also been demonstrated. Because electrons are merely rearranged and are conserved, and as no conventional current is used, minuscule power consumption is expected. Signal transfer is mediated by electrons confined by and tunneling among constituent dots. An atomic force microscope operating in the NC mode was deployed to fabricate these active structures. A variant of that technique, KPFM, records individual atom charge state changes to reveal and verify the inner workings of this approach. Spontaneous spatial charge arrangements in ensembles occur in response to imposed charge inputs, allowing information representation and computation. This approach to electronics we call BASIL for Binary Atomic Silicon Logic.
Publication date
PublisherCornell University Library
Other version
Linkhttps://arxiv.org/abs/1706.07427v3
LanguageEnglish
AffiliationNational Institute for Nanotechnology; National Research Council Canada
Peer reviewedNo
NPARC number23002384
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Record identifier2048cfaf-724c-4aa0-b3bd-09eeea9fdfb6
Record created2017-10-26
Record modified2017-10-26
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