Raman scattering in Si/SiGe nanostructures: Revealing chemical composition, strain, intermixing, and heat dissipation

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DOIResolve DOI: http://doi.org/10.1063/1.4886598
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TypeArticle
Journal titleJournal of Applied Physics
ISSN0021-8979
Volume116
Issue1
Article number14305
SubjectGermanium; Phonons; Raman spectra; Raman scattering; Thermal conductivity
AbstractWe present a quantitative analysis of Raman scattering in various Si/Si1-xGex multilayered nanostructures with well-defined Ge composition (x) and layer thicknesses. Using Raman and transmission electron microscopy data, we discuss and model Si/SiGe intermixing and strain. By analyzing Stokes and anti-Stokes Raman signals, we calculate temperature and discuss heat dissipation in the samples under intense laser illumination.
Publication date
LanguageEnglish
AffiliationMeasurement Science and Standards; Information and Communication Technologies; National Research Council Canada
Peer reviewedYes
NPARC number21272773
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Record identifier20665cc4-b9c8-4b5b-a19c-1a5e81424733
Record created2014-12-03
Record modified2017-03-23
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