The Ammonia-MBE Approach for High Electron Mobility in GaN Epilayers and AlGaN/GaN HFETs

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Proceedings titleIII-Nitride Based Semiconductor Electronics and Optical Devices and Thirty-fourth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXXIV), proceedings of the International Symposia
Series titleProceedings (Electrochemical Society); Volume 2001-1
Conference199th ECS Meeting, Washington, D.C., USA
Pages1935; # of pages: 17
Publication date
PublisherElectrochemical Society
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedYes
NPARC number12328641
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Record identifier21223bc5-b575-4b7a-9d85-9497ccbfcb7b
Record created2009-09-10
Record modified2016-05-09
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