Laser processing of silicon at submicron scale using photochromic films

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DOIResolve DOI: http://doi.org/10.1016/j.apsusc.2004.03.004
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TypeArticle
Journal titleApplied Surface Science
ISSN0169-4332
Volume230
Issue1-4
Pages411417; # of pages: 7
Subjectlaser processing; organic films
AbstractLaser fabrication at submicron scale is experimentally demonstrated with the nonlinear optical switching effect of photochromism. The effect, which is a result of change in the optical properties of the photochromic material between the open-ring and closed-ring isomers during the photoisomerization, effectively reduces the laser beam size. The ultrafast response of the molecular photocyclization and cycloreversion reactions at a time scale of a few picoseconds ensures the instantaneous realization of the effect. Utilizing a photochromic film of cis-1,2-dicyano-1,2-bis(2,4,5-trimethyl-3-thienyl) ethane as the mask layer, laser processing of a silicon wafer demonstrated submicron scale feature size with improved surface quality as compared to the smallest features achievable using direct laser ablation without the photochromic film.
Publication date
LanguageEnglish
AffiliationNRC Industrial Materials Institute; National Research Council Canada
Peer reviewedYes
NPARC number21272499
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Record identifier2130d698-faec-49c3-b5dd-85e040233042
Record created2014-12-01
Record modified2016-05-09
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