The implications of spontaneous polarisation effects for carrier transport measurements in GaN

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DOIResolve DOI: http://doi.org/10.1088/0268-1242/15/4/319
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TypeArticle
Journal titleSemiconductor science and technology
Volume15
Issue4
Pages413417; # of pages: 5
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
NPARC number12338521
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Record identifier2320dce7-a891-47c3-9197-651867541d0a
Record created2009-09-10
Record modified2016-05-09
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