Series-coupled triple quantum dot molecules

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Journal titleJapanese Journal of Applied Physics
Article number02BJ06
SubjectCoulomb diamonds; Design Principles; Device processing; Double-quantum dot device; Interaction model; Random impurities; Region shape; Sequential tunneling; Single gates; Submicron; Triple quantum; Well structure; Well thickness; Coulomb blockade; Electronic properties; Semiconductor device structures; Semiconductor quantum dots
AbstractWe present the electronic properties of a triple quantum dot molecule embedded inside a sub-micron mesa, made from a quadruple-barrier triplequantum- well structure, and surrounded by a single gate electrode. We outline the design principles of the quadruple-barrier triple-quantum-well structure and calculate the energy of the three lowest states as a function of center well thickness. We observe regular and irregular shaped Coulomb diamond regions similar to those for double quantum dot devices. Variation in the Coulomb blockade region shape is introduced by fluctuation in the offset energies between the quantum dots likely associated with device processing and random impurity potential in the material. We also present Coulomb blockade patterns calculated with a constant interaction model for sequential tunneling through the three series-coupled quantum dots. © 2012 The Japan Society of Applied Physics.
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AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number21270101
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Record identifier2356459a-c035-423d-a4dd-7433e49f2f22
Record created2013-12-23
Record modified2016-05-09
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