How good is the polarization selection rule for intersubband transitions?

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DOIResolve DOI: http://doi.org/10.1063/1.121151
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TypeArticle
Journal titleApplied Physics Letters
Volume72
Issue14
Pages16821684; # of pages: 3
Subjectconduction bands; gallium arsenide; III-V semiconductors; interface states; light polarisation; photodetectors; semiconductor quantum wells
AbstractUsing GaAs based quantum well infrared photodetectors (QWIPs) with either GaAs or InGaAs wells, we experimentally investigate the accuracy of the polarization selection rule for conduction band intersubband transitions. We employ a device structure and a light coupling geometry where the parasitic light scattering is negligible. The experiments imply that the selection rule is followed to an accuracy of 0.2% for a 8.1 μm QWIP with GaAs wells; this degrades to 3% for a 4.6 μm QWIP with In0.1Ga0.9As wells.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12327494
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Record identifier23b15a4c-863f-4130-abd7-f59c36567a85
Record created2009-09-10
Record modified2016-05-09
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