Investigations of low-frequency noise of GaN based heterostructure field-effect transistors

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TypeArticle
Journal titleElectronics Letters
Volume39
Issue11
Pages877878; # of pages: 2
Publication date
Linkhttp://ieeexplore.ieee.org/xpls/abs_all.jsp?isnumber=27171&arnumber=1207249&count=39&index=36
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
NPARC number12744266
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Record identifier23c94287-d437-4063-99c8-1cc4d9532b21
Record created2009-10-27
Record modified2016-05-09
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