Effect of template morphology on the efficiency of InGaN/GaN quantum wells and light-emitting diodes grown by molecular-beam epitaxy

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DOIResolve DOI: http://doi.org/10.1063/1.1884745
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TypeArticle
Journal titleApplied Physics Letters
Volume86
Issue12
Pages121110
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada; NRC Steacie Institute for Molecular Sciences
Peer reviewedNo
NPARC number12744109
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Record identifier243d40ba-2ed0-4f56-80d2-ca53b0735cc8
Record created2009-10-27
Record modified2016-05-09
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