Single-electron dynamics of an atomic silicon quantum dot on the H-Si (100)- (2×1) surface

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DOIResolve DOI: http://doi.org/10.1103/PhysRevLett.112.256801
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TypeArticle
Journal titlePhysical Review Letters
ISSN1079-7114
Volume112
Issue25
Article number256801
AbstractHere we report the direct observation of single electron charging of a single atomic dangling bond (DB) on the H-Si(100)-2×1 surface. The tip of a scanning tunneling microscope is placed adjacent to the DB to serve as a single-electron sensitive charge detector. Three distinct charge states of the dangling bond - positive, neutral, and negative - are discerned. Charge state probabilities are extracted from the data, and analysis of current traces reveals the characteristic single-electron charging dynamics. Filling rates are found to decay exponentially with increasing tip-DB separation, but are not a function of sample bias, while emptying rates show a very weak dependence on tip position, but a strong dependence on sample bias, consistent with the notion of an atomic quantum dot tunnel coupled to the tip on one side and the bulk silicon on the other. © 2014 American Physical Society.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); National Institute for Nanotechnology (NINT-INNT)
Peer reviewedYes
NPARC number21272165
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Record identifier24e39eca-55a0-430f-8827-56136b3176be
Record created2014-07-23
Record modified2016-05-09
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