High stability heterojunction bipolar transistors with carbon-doped base grown by atomic layer chemical beam epitaxy

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DOIResolve DOI: http://doi.org/10.1116/1.588789
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TypeArticle
Journal titleJournal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena
Volume14
Issue6
Pages35093513; # of pages: 5
SubjectANNEALING; BIPOLAR TRANSISTORS; CARBON ADDITIONS; COMPARATIVE EVALUATIONS; DOPED MATERIALS; EPITAXIAL LAYERS; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; HETEROJUNCTIONS; INDIUM PHOSPHIDES; PERFORMANCE; TEMPERATURE RANGE 400 - 1000 K; THERMODYNAMIC PROPERTIES
AbstractWe report the improved thermal stability of heavily C-doped GaAs layers using atomic layer chemical beam epitaxy (ALCBE). The use of ALCBE improves the crystal quality and reduces hydrogen incorporation in the epilayers by about a factor of 2, resulting in enhanced electrical dopant activity as compared to conventional growth techniques. This process has been successfully applied to the fabrication of InGaP/GaAs heterojunction bipolar transistors (HBTs) with a highly C-doped base grown by ALCBE and other layers grown by conventional CBE. Dc current gains up to 150, for a base doping layer of 3 � 1019 cm � 3, have been obtained. Moreover, the thermal stability of these devices is increased, as indicated by a post-growth annealing (650�C, 60 min) which induces only a slight current gain degradation of about 20% at high collector currents, to be compared to a degradation of 60% for HBTs conventionally grown by CBE.
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NPARC number12327093
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Record identifier24eae43b-d18b-4b20-a331-449b0f15a817
Record created2009-09-10
Record modified2016-05-09
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