A Program-Erasable High-k Hf0.3N0.2O 0.5 MIS Capacitor with Good Retention

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DOIResolve DOI: http://doi.org/10.1109/LED.2007.905375
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TypeArticle
Journal titleIEEE Electron Device Letters
Volume28
Issue10
Pages913915; # of pages: 3
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12744720
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Record identifier24ecf5fb-2035-4146-b2e3-9bb4e12ccc90
Record created2009-10-27
Record modified2016-05-09
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