Density of amorphous SixGe1-x alloys prepared by high-energy ion implantation

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DOIResolve DOI: http://doi.org/10.1016/0022-3093(95)00310-X
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TypeArticle
Journal titleJournal of Non-Crystalline Solids
Volume191
Issue1-2
Pages193199; # of pages: 7
AbstractThe atomic density of amorphous SixGe1−x alloys (0 x 1), has been measured. The amorphous alloys were made by high-ion-energy implantation into monocrystalline SixGe1−x layers, deposited epitaxially on silicon substrates. During the bombardments, a steel contact mask was used to create alternating lines of amorphous and crystalline material. The ratio between the densities of crystalline and amorphous alloys was measured with 0.1–0.2% accuracy using surface profilometry and Rutherford backscattering spectrometry in conjunction with channelling. Amorphous pure elements and alloys are less dense by 1.5–2.1% than the crystalline pure elements and alloys. By comparing both the amorphous and crystalline densities with Vegard's law, it is found that this law underestimates the a-SixGe1−x densities by the same amount as those of c-SixGe1−x.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12329145
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Record identifier259943a2-8d41-488e-b13e-fe34a45ad149
Record created2009-09-10
Record modified2016-05-09
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