Visible light emitting Si/SiO2 superlattices

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Proceedings titleSolid-State Electronics
ConferenceSeventh International Conference on Modulated Semiconductor Structures, 10-14 July 1995, Madrid, Spain
Pages197201; # of pages: 5
AbstractSix-period superlattices of Si/SiO2 have been grown at room temperature using molecular beam epitaxy. With this mature technology, the ultra-thin (1-3 nm) Si layers were grown to atomic layer precision. These layers were separated by ~1 nm thick SiO2 layers whose thickness was also well controlled by using a rate-limited oxidation process. The chemical and physical structures of the multilayers were characterized by cross-sectional TEM, X-ray diffraction, Raman spectroscopy, Auger sputter-profile, and X-ray photoelectron spectroscopy. The analysis showed that the Si layer is free of impurities and is amorphous, and that the SiO2/Si interface is sharp (~0.5 nm). Photoluminescence (PL) measurements were made at room temperature using 457.9 nm excitation. The PL peak occurred at wavelengths across the visible range for these multilayers. The peak energy position E was found to be related to the Si layer thickness d by E (eV) = 1.60+0.72d-2 in accordance with a quantum confinement mechanism and the bulk amorphous-Si band gap.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12327197
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Record identifier25fb6f87-79e5-406b-b570-430a49e25a64
Record created2009-09-10
Record modified2016-05-09
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