Carrier localization and electronic phase separation in a doped spin-orbit-driven Mott phase in Sr3 (Ir1-x Ru x)2O7

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DOIResolve DOI: http://doi.org/10.1038/ncomms4377
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TypeArticle
Journal titleNature Communications
ISSN2041-1723
Volume5
Article number3377
Subjectiridium; ruthenium; strontium; correlation; Coulomb criterion; nanotechnology; phase transition; article; controlled study; crystal structure; electronics; high temperature; low temperature; mott phase; neutron diffraction; neutron scattering; phase separation; phase transition; roentgen spectroscopy; transition temperature; X ray powder diffraction
AbstractInterest in many strongly spin-orbit-coupled 5d-transition metal oxide insulators stems from mapping their electronic structures to a J eff=1/2 Mott phase. One of the hopes is to establish their Mott parent states and explore these systems' potential of realizing novel electronic states upon carrier doping. However, once doped, little is understood regarding the role of their reduced Coulomb interaction U relative to their strongly correlated 3d-electron cousins. Here we show that, upon hole-doping a candidate Jeff=1/2 Mott insulator, carriers remain localized within a nanoscale phase-separated ground state. A percolative metal-insulator transition occurs with interplay between localized and itinerant regions, stabilizing an antiferromagnetic metallic phase beyond the critical region. Our results demonstrate a surprising parallel between doped 5d- and 3d-electron Mott systems and suggest either through the near-degeneracy of nearby electronic phases or direct carrier localization that U is essential to the carrier response of this doped spin-orbit Mott insulator. © 2014 Macmillan Publishers Limited. All rights reserved.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); NRC Canadian Neutron Beam Centre (CNBC-CCFN)
Peer reviewedYes
NPARC number21272212
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Record identifier274ca0ce-8251-4235-a4d0-5aa4157e56bb
Record created2014-07-23
Record modified2016-05-09
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