GaInNAs(Sb) surface normal devices

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DOIResolve DOI: http://doi.org/10.1002/pssa.200777460
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TypeArticle
Journal titlePhysica Status Solidi A
Volume205
Issue1
Pages8592; # of pages: 8
Subject42.55.Px; 42.79.Hp
AbstractAfter a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of the key properties of these III–V alloys and presents current progress in their exploitation in a variety of surface-normal operating devices such as Vertical (External)-Cavity Surface-Emitting Lasers (V(E)CSELs) and SEmiconductor Saturable Absorber Mirrors (SESAMs).
Publication date
PublisherWiley
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number21268061
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Record identifier27ab1d92-cbc5-4901-b7fc-15d135a72d4f
Record created2013-04-05
Record modified2016-05-09
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