Properties of InAlP Native Oxides Suorting MOS Inversion-layer Behavior

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TypeArticle
Conference43rd Electronic Materials Conference, June 27-29 2001, Notre Dame, Indiana
Volume
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12346233
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Record identifier280608c4-8784-4d59-930a-f5c74ec9b2d4
Record created2009-09-17
Record modified2016-05-09
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