Unraveling of free-carrier absorption for terahertz radiation in heterostructures

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DOIResolve DOI: http://doi.org/10.1103/PhysRevB.84.205319
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TypeArticle
Journal titlePHYSICAL REVIEW B
Volume84
Issue20
Pages2053191; # of pages: 205319
AbstractThe relation between free-carrier absorption and intersubband transitions in semiconductor heterostructures is resolved by comparing a sequence of structures. Our numerical and analytical results show how free-carrier absorption evolves from the intersubband transitions in the limit of infinite number of wells with vanishing barrier width. It is explicitly shown that the integral of the absorption over frequency matches the value obtained by the f -sum rule. This shows that a proper treatment of intersubband transitions is fully sufficient to simulate the entire electronic absorption in heterostructure THz devices.
Publication date
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
NPARC number18969338
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Record identifier28212739-5ddf-4f17-8435-46c618fac52d
Record created2011-11-23
Record modified2016-05-09
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