Defect diffusion in ion implanted AlGaAs and InP : Consequences for quantum well intermixing

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DOIResolve DOI: http://doi.org/10.1063/1.360157
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TypeArticle
Journal titleJournal of Applied Physics
Volume78
Issue4
Pages23672371; # of pages: 5
SubjectALUMINIUM ARSENIDES; ANNEALING; DEFECTS; DIFFUSION; GALLIUM ARSENIDES; ION IMPLANTATION; LASER MATERIALS; PHOTOLUMINESCENCE; QUANTUM WELLS
AbstractInGaAs/GaAs/AlGaAs and InGaAs/InGaAsP/InP laser structures, with InGaAs quantum wells approximately 1.85 �m beneath the surface, were implanted with ions having energies up to 8.6 MeV. Intermixing of the quantum wells, after rapid thermal annealing, was monitored through changes in the energy, linewidth, and intensity of the photoluminescence peak from the quantum wells. Where the defects had to diffuse primarily through Al0.71Ga0.29As, these quantities correlate strongly, for short anneal times, with calculated vacancy generation and ion deposition at the depth of the quantum well prior to annealing. This suggests that the defect diffusion length in the AlGaAs and/or GaAs is quite low. For diffusion primarily through InP, the photoluminescence data correlated well with the calculated total number of vacancies created in the sample, suggesting that defect diffusion is very efficient in InP.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12328511
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Record identifier2a0a1fc7-cb0f-4982-a02d-f92151698f9b
Record created2009-09-10
Record modified2016-05-09
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