A spectroscopic study of GaAs homojunction internal photoemission far infrared detectors

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DOIResolve DOI: http://doi.org/10.1016/S1350-4495(97)00006-6
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TypeArticle
Journal titleInfrared physics & technology
ISSN1350-4495
Volume38
Issue3
Pages133138; # of pages: 6
AbstractWe report a spectroscopic study of absorption and photoconductivity in GaAs homojunction interfacial workfunction internal photoemission (HIWIP) far-infrared (FIR) detectors utilizing molecular beam epitaxy (MBE) grown multilayer (p+−p−−p+−p−) structures. Strong FIR (50–200 μm) free carrier absorption has been observed and analyzed for a p+ GaAs thin film, revealing the suitability for FIR detection. The basic physical mechanism of free carrier absorption in the HIWIP FIR detectors has been determined to be an acoustic phonon-emission assisted process. A simple recombination model is proposed to account for the bias dependence of the responsivity and the saturation behavior. Using the measured responsivity and dark current data, detectivity (Dλ*) of the FIR detectors has also been estimated.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedYes
Identifier10520831
NPARC number12339182
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Record identifier2a2bf4a7-7c2f-4033-9602-95a52a1b0ce3
Record created2009-09-11
Record modified2016-05-09
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