III-V access waveguides using atomic layer deposition

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DOIResolve DOI: http://doi.org/10.1117/12.2004310
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TypeArticle
Proceedings titleAdvanced Fabrication Technologies for Micro/Nano Optics and Photonics VI
Series titleSPIE - International Society for Optical Engineering. Proceedings; Volume 8613
ConferenceAdvanced Fabrication Technologies for Micro/Nano Optics and Photonics VI, 5 February 2013 through 6 February 2013, San Francisco, CA
ISSN0277-786X
ISBN9780819493828
Article number86130D
SubjectCompound semiconductors; Critical parts; Optically Active; Photonic circuitry; Photonic crystal membranes; Quantum photonics; Selective area epitaxy; Silicon-on-insulators; Atomic layer deposition; Deposition; Quantum chemistry; Refractive index; Technology; Photonics
AbstractNormally, the larger refractive index contrast of silicon-on-insulator (SOI) photonics used for transporting highly confined optical modes is not available in compound semiconductor systems because the optically active layer rests upon an epitaxial support layer having a similar refractive index. Here, a semiconductor-under-insulator (SUI) technology for compound semiconductor membrane photonic circuitry is presented. It will be shown that such a technology can facilitate the transport of highly confined optical modes in compound semiconductor systems and is anticipated to be a critical part of future scalable quantum photonics applications. © 2013 Copyright SPIE.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC)
Peer reviewedYes
NPARC number21270618
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Record identifier2a2d27b2-5688-4627-8929-55fb6952a2ee
Record created2014-02-17
Record modified2017-04-24
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