Selective area bandgap control during MBE growth of InGaAs/InAlAs QWs for optoelectronic device applications

DOIResolve DOI:
AuthorSearch for: ; Search for: ; Search for: ; Search for: ; Search for: ; Search for:
Subject1.3 mum; 1.55 mum; gallium arsenide; III-V semiconductors; indium compounds; indium migration; InGaAs/InAlAs QWs; InGaAs-InAlAs; InGaAs-InAlAs single quantum wells; laser transitions; long wavelength integrated optoelectronic devices; MBE growth; molecular beam epitaxial growth; optical fibre communication; optical fibre communication systems; optical transmitters; optoelectronic device applications; patterned InP substrates; quantum well lasers; selective area bandgap control; semiconductor growth; semiconductor lasers
AbstractSemiconductor lasers emitting at 1.3 ?m and 1.55 ?m wavelengths are of particular interest because of their application in optical fibre communication systems. In this work, we investigate for the first time the process of indium migration during the growth of InGaAs-InAlAs single quantum wells grown by MBE on patterned InP substrates for the fabrication of long wavelength integrated optoelectronic devices
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12328900
Export citationExport as RIS
Report a correctionReport a correction
Record identifier2a3f4bc0-cc8d-4023-8eb3-46b35832439f
Record created2009-09-10
Record modified2016-05-09
Bookmark and share
  • Share this page with Facebook (Opens in a new window)
  • Share this page with Twitter (Opens in a new window)
  • Share this page with Google+ (Opens in a new window)
  • Share this page with Delicious (Opens in a new window)