Interband impact ionization in THz field on transport in InAs/AlSb heterostructures

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DOIResolve DOI: http://doi.org/10.1088/0268-1242/17/3/306
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TypeArticle
Journal titleSemiconductor science and technology
Volume17
Issue3
Pages215218; # of pages: 4
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12327520
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Record identifier2a877406-af3e-48c5-88fa-608fb26c6478
Record created2009-09-10
Record modified2016-05-09
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