Carrier recombination in tailored multilayer Si/Si1-xGex nanostructures

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DOIResolve DOI: http://doi.org/10.1016/j.physb.2014.03.084
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TypeArticle
Journal titlePhysica B: Condensed Matter
ISSN0921-4526
Volume453
Pages2933; # of pages: 5
SubjectCarrier recombination; Si/SiGe; Photoluminescence
AbstractPhotoluminescence (PL) measurements were performed in Si/Si1-xGex nanostructures with a single Si0.92Ge0.08 nanometer-thick layer incorporated into Si/Si0.6Ge0.4 cluster multilayers. Under pulsed laser excitation, the PL decay associated with the Si0.92Ge0.08 nano-layer is found to be nearly a 1000 times faster compared to that in Si/Si0.6Ge0.4 cluster multilayers. A model considering Si/SiGe hetero-interface composition and explaining the fast and slow time-dependent recombination rates is proposed.
Publication date
PublisherElsevier
LanguageEnglish
AffiliationNational Research Council Canada; Measurement Science and Standards; Information and Communication Technologies
Peer reviewedYes
NPARC number21272952
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Record identifier2abb46bb-2fed-4a97-8fc7-460640ffc2fe
Record created2014-12-03
Record modified2016-05-09
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