Fast light-emitting silicon-germanium nanostructures for optical interconnects

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DOIResolve DOI: http://doi.org/10.1007/s11082-012-9549-0
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TypeArticle
Journal titleOptical and Quantum Electronics
ISSN0306-8919
1572-817X
Volume44
Issue12-13
Pages505512; # of pages: 8
Subjectsilicon; germanium; dots; photoluminescence; electroluminescence
AbstractEpitaxially-grown Si/SiGe quantum dot complexes produce efficient photoluminescence and electroluminescence in the desired spectral range of 1.3–1.6µm. The latest progress in our understanding of the physics of carrier recombination in Si/SiGe nanostructures is reviewed, and a new route toward CMOS compatible light emitters is proposed.
Publication date
LanguageEnglish
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedYes
Identifier9549
NPARC number21268394
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Record identifier2af93d5f-1fd9-4d61-916e-893f1e113396
Record created2013-07-09
Record modified2016-05-09
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