Superlattice and multilayer structures based on ferromagnetic semiconductor (Ga,Mn)As

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DOIResolve DOI: http://doi.org/10.1016/S0921-4526(98)00319-6
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TypeArticle
Journal titlePhysica B : Condensed Matter
Volume249-251
Pages809813; # of pages: 5
Subject(Ga,Mn)As; ferromagnetic semiconductor; ferromagnetism; resonant tunneling; superlattices
AbstractFerromagnetic semiconductor (Ga,Mn)As-based superlattice and multilayer structures, (Ga,Mn)As/(Al,Ga)As and (Ga,Mn)As/(In,Ga)As, were prepared by molecular beam epitaxy. X-ray diffraction measurements showed that the thickness and alloy composition in the superlattices were well controlled. Magnetotransport measurements revealed the existence of ferromagnetic order at low temperatures. Resonant tunneling diodes with (Ga,Mn)As showed features that are well explained by a simple physical picture.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12327975
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Record identifier2b3a2b8f-00da-4525-9dfa-8337b71af5f0
Record created2009-09-10
Record modified2016-05-09
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