Type-I interband cascade lasers near 3.2 μm

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DOIResolve DOI: http://doi.org/10.1063/1.4907326
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TypeArticle
Journal titleApplied Physics Letters
ISSN0003-6951
Volume106
Issue4
Article number41117
SubjectQuantum wells; Current density; III-V Semiconductors; Cladding; Laser diodes
AbstractInterband cascade (IC) lasers have been demonstrated based on type-I InGaAsSb/AlAsSb quantum well (QW) active regions. These type-I IC lasers are composed of 6-cascade stages and InAs/AlSb superlattice cladding layers. In contrast to the use of quinary AlGaInAsSb barriers for active region in previous type-I QW lasers, the type-I QW active region in each stage is sandwiched by digitally graded multiple InAs/AlSb QW electron injector and GaSb/AlSb QW hole injector. The fabricated type-I IC lasers were able to operate in continuous wave and pulsed modes at temperatures up to 306 and 365 K, respectively. The threshold current densities of broad-area lasers were around 300 A/cm2 at 300 K with a lasing wavelength near 3.2 μm. The implications and prospects of these initial results are discussed.
Publication date
PublisherAIP Publishing
LanguageEnglish
AffiliationNational Research Council Canada; Information and Communication Technologies; Security and Disruptive Technologies
Peer reviewedYes
NPARC number21275716
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Record identifier2b47033e-12b2-4385-8c82-c3eca524c4b1
Record created2015-07-14
Record modified2016-05-09
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