Electric field induced non-ohmic conduction in the 2D insulating phase

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DOIResolve DOI: http://doi.org/10.1016/0039-6028(96)00573-0
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TypeArticle
Journal titleSurface Science
Volume361-362
Pages941944; # of pages: 4
SubjectElectrical transport; Electrical transport measurements; Metal-oxide-semiconductor (MOS) structures; Semiconductor-insulator interfaces; Silicon
AbstractThreshold conduction was studied in Si MOSFET samples with mobility ranging from 5000 to 55 000 cm2/V ? s, and in the wide temperature range 20 mK-4 K. We found that non-ohmic conduction is qualitatively different in low and high mobility samples near and far from the critical density. In the high mobility samples we observed a novel feature, in that the differential resistance changes sign slightly above the threshold.
Publication date
AffiliationNational Research Council Canada; NRC Institute for Microstructural Sciences
Peer reviewedNo
NPARC number12327892
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Record identifier2c06274e-a252-400b-9d95-5c37a4efb622
Record created2009-09-10
Record modified2016-05-09
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