SML resist processing for high-aspect-ratio and high-sensitivity electron beam lithography

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DOIResolve DOI: http://doi.org/10.1186/1556-276X-8-139
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TypeArticle
Journal titleNanoscale Research Letters
ISSN1931-7573
Volume8
Issue1
Pages17; # of pages: 7
SubjectSML resist; Electron beam lithography; High-aspect-ratio nanolithography; Nanolithography; Nanofabrication; Lift-off; Preventing pattern collapse; Resists (85.40.Hp); Electron beam lithography (85.40.Hp); Nanolithography (81.16.Nd)
AbstractA detailed process characterization of SML electron beam resist for high-aspect-ratio nanopatterning at high sensitivity is presented. SML contrast curves were generated for methyl isobutyl ketone (MIBK), MIBK/isopropyl alcohol (IPA) (1:3), IPA/water (7:3), n-amyl acetate, xylene, and xylene/methanol (3:1) developers. Using IPA/water developer, the sensitivity of SML was improved considerably and found to be comparable to benchmark polymethylmethacrylate (PMMA) resist without affecting the aspect ratio performance. Employing 30-keV exposures and ultrasonic IPA/water development, an aspect ratio of 9:1 in 50-nm half-pitch dense grating patterns was achieved representing a greater than two times improvement over PMMA. Through demonstration of 25-nm lift-off features, the pattern transfer performance of SML is also addressed. © 2013 Mohammad et al.
Publication date
LanguageEnglish
AffiliationNational Research Council Canada (NRC-CNRC); Security and Disruptive Technologies
Peer reviewedYes
NPARC number21271838
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Record identifier2c700612-896e-4071-8248-e0882468ce7a
Record created2014-04-23
Record modified2016-05-09
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