Growth of crack-free, carbon-doped GaN and AlGaN/GaN high electron mobility transistor structures on Si (111) substrates by ammonia molecular beam epitaxy

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DOIResolve DOI: http://doi.org/10.1063/1.2215600
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TypeArticle
Journal titleApplied Physics Letters
Volume88
Issue25
Pages252114
Publication date
AffiliationNRC Institute for Microstructural Sciences; National Research Council Canada
Peer reviewedNo
NPARC number12744848
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Record identifier2cfaf97a-0bb1-469e-8112-fc923c96e4b5
Record created2009-10-27
Record modified2016-05-09
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